Semiconductor laser device
文献类型：专利
| 作者 | MORIYA, HIROSHI; ASHIDA, KISHO; HIRATAKA, TOSHINORI; MORITA, MAMORU |
| 发表日期 | 2005-08-30 |
| 专利号 | US6937631 |
| 著作权人 | LUMENTUM JAPAN, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device which ensures high yield, high reliability and high power output by reduction in tensile strain in its active region for improvement in the COD level. The device comprises: a semiconductor crystal-growing portion having an active layer for conversion of electric energy into light energy and a mesa structure protruding on the one side; and an electrode film which is electrically connected with the top face of the mesa structure. The electrode film has a tensile strain and stretches sideward from the mesa structure. In the device, there is a strain control film which is polymerized with the electrode film part stretching sideward from the mesa structure and has a compressive stress. |
| 公开日期 | 2005-08-30 |
| 申请日期 | 2003-02-05 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84650]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMENTUM JAPAN, INC. |
| 推荐引用方式 GB/T 7714 | MORIYA, HIROSHI,ASHIDA, KISHO,HIRATAKA, TOSHINORI,et al. Semiconductor laser device. US6937631. 2005-08-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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