Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | YAMANAKA KENICHI; OOTAKI KANAME; HORIUCHI SHIGEKI; TAKAMIYA SABUROU |
| 发表日期 | 1982-11-12 |
| 专利号 | JP1982184276A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a V groove forming semiconductor laser having good charac teristic by a simple method, by providing a reverse conducting type semiconductor layer on the surface of a semiconductor layer with a V groove and providing a diffused layer reaching an active layer or the neiborhood thereof from the V groove. CONSTITUTION:After the successive liquid epitaxial growths of an N type Al0.3Ga0.7As clad layer 2, P type GaAs active layer 3, P type Al0.3Ga0.7As clad 4 and N type GaAs closed layer 5 on an N type GaAs substrate 1, a V groove 7 is formed. Further, a P type GaAs layer 10 is liquid epitaxial grown simultaneously with the diffusion impurity, e.g. In previously contained in Ga melt diffused to form a diffused layer 6. Thereafter, a P layer 11 is formed by diffusion for easy removal of ohmic to form an electrode 8 thereon and electrode 9 on the N type GaAs substrate |
| 公开日期 | 1982-11-12 |
| 申请日期 | 1981-05-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84654]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | YAMANAKA KENICHI,OOTAKI KANAME,HORIUCHI SHIGEKI,et al. Semiconductor laser device and manufacture thereof. JP1982184276A. 1982-11-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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