半導体発光装置の製造方法
文献类型：专利
| 作者 | 岩崎 保; 柏 享; 岡本 孝太郎 |
| 发表日期 | 1995-01-11 |
| 专利号 | JP1995001813B2 |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体発光装置の製造方法 |
| 英文摘要 | PURPOSE:To shorten the manufacture processes and to enable the mass production of high-performance semiconductor light-emitting devices, by forming a high-melting metal electrode on a III-V compound semiconductor having a double hereto structure, etching the substrate with the use of the electrode as a mask, and selectively growing crystals of a III-V compound semiconductor in the etched section. CONSTITUTION:An n-type GaAs buffer layer 2, an n-type Al0.3Ga0.7As clad layer 3, a GaAs active layer 4, a p-type Al0.3GaAs0.7 clad layer 5 and a p type GaAs cap layer 6 are deposited in that order on an n-type GaAs substrate A W film 7 is vapor deposited thereon. The film 7 is patterned to form a stripe-shaped electrode 8, and the layers 6, 5, 4 and a part of the layer 3 are selectively removed by etching with the use of the electrode 8 as a mask to form an etched section 9. Al0.3Ga0.7As crystals are grown in the etched section by means of the epitaxy so as to form a buried layer 10. After the surfaces of the substrate 1 are polished, a negative electrode 12 of Au-Ge-Ni is formed on the bottom face. The substrate is then cleaved to obtain a semiconductor laser having reflection faces 11a and 11b. |
| 公开日期 | 1995-01-11 |
| 申请日期 | 1985-05-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84660]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | 岩崎 保,柏 享,岡本 孝太郎. 半導体発光装置の製造方法. JP1995001813B2. 1995-01-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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