Manufacture of semiconductor laser
文献类型：专利
| 作者 | FUJIWARA KIYOSHI; ISHINO MASATO; TAKENAKA NAOKI; MATSUI YASUSHI |
| 发表日期 | 1992-08-19 |
| 专利号 | JP1992229682A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To stably manufacture a buried-type semiconductor laser whose laser characteristic is good and whose reliability is high. CONSTITUTION:An n-InP buffer layer 102, an InGaAsP active layer 103, a p-InP clad layer 104 and a p-InGaAsP surface protective layer 105 are epitaxially grown sequentially on an n-InP substrate 101 whose main plane is a (100) plane. A stripe-shaped mask 106, for etching use, which is parallel to a direction is formed by a photolithographic method and a dry etching method. The n-InP buffer layer 102 is etched down to the lower part of the InGaAsP active layer 103 by using a mixed solution which contains hydrochloric acid, hydrogen peroxide water and acetic acid; a mesa stripe 107 is formed. Then, the insulating film 106 is removed; the p-InGaAsP surface protective layer 105 is removed by using a mixed solution of sulfuric acid with hydrogen peroxide water; after that, InP current-blocking layers 108, 109 are grown selectively in regions other than the mesa stripe 107 by a liquid epitaxial growth operation; a laser by a buried-type heterostructure is formed. |
| 公开日期 | 1992-08-19 |
| 申请日期 | 1991-05-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84671]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | FUJIWARA KIYOSHI,ISHINO MASATO,TAKENAKA NAOKI,et al. Manufacture of semiconductor laser. JP1992229682A. 1992-08-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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