Semiconductor laser
文献类型：专利
| 作者 | KAWANO HIDEO |
| 发表日期 | 1992-04-28 |
| 专利号 | JP1992127595A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To realize a lateral mode control small in astigmatic difference by a method wherein the injection width of a current in a lateral mode control type AlGaInP semiconductor laser is set much smaller than the width of an effective refractive index distribution provided in parallel with an active layer. CONSTITUTION:An etching process is carried out with a mixed solution of H3PO4, H2O2, and H2O and an etching solution of H2SO4 as far as a halfway point of a P-(Al0.6Ga0.4)0.5In0.5P clad layer 15, and the clad layer 15 is set as thick as 0.2-0.3mum on both the sides of a stripe-like mesa. Only a P-Ga0.5In0.5P car layer 16 is selectively etched with the mixed solution of H3PO4, H2O2, and H2O to enable the width B of the cap layer 16 to be smaller than the width A of the upper part of the clad layer 15 of the stripe-like mesa by the control of side etching. At this point, as the injection width A of a current for laser oscillation is set much smaller than the width C of an effective refractive index distribution provided in parallel with the active layer 14, the wave front of laser rays is small in distortion and the astigmatic difference becomes smaller than 5mum. |
| 公开日期 | 1992-04-28 |
| 申请日期 | 1990-09-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84672]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KAWANO HIDEO. Semiconductor laser. JP1992127595A. 1992-04-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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