Semiconductor laser device
文献类型：专利
| 作者 | KASAI SHUSUKE; MATSUMOTO AKIHIRO; MORIMOTO TAIJI; KANEIWA SHINJI; MIYAUCHI NOBUYUKI; HAYASHI HIROSHI |
| 发表日期 | 1990-06-11 |
| 专利号 | JP1990151093A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable single basic mode oscillation without causing end surface destruction even in the case of large output by using a semiconductor laser element of reflectivity waveguide type, and arranging a reflection member so as to face one emission end surface of the laser element. CONSTITUTION:A semiconductor laser element 2 of effective reflectivity waveguide type is used. The width of the waveguide of the semiconductor laser element 2 is set in the manner in which only the light of basic transversal mode in the laser light reflected by a reflection member material 7 is effectively fed back in the above waveguide. When the basic transversal mode light is output from a rear side end surface 4, the light is diffracted and travels extending. While the peak position of light intensity distribution is kept at a center, the wave travels toward the resonance direction of a laser resonator. Since a reflection surface 8 is vertical to the resonance direction of laser, the central peak part of the basic transversal mode is reflected by the reflection surface 8, and again fed back in the waveguide region 5. Thereby, the single basic transversal mode oscillation of laser light with large output is enabled without causing end surface destruction. |
| 公开日期 | 1990-06-11 |
| 申请日期 | 1988-12-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84673]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | KASAI SHUSUKE,MATSUMOTO AKIHIRO,MORIMOTO TAIJI,et al. Semiconductor laser device. JP1990151093A. 1990-06-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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