Manufacture of semiconductor laser
文献类型：专利
| 作者 | ASAGA TATSUYA |
| 发表日期 | 1991-05-29 |
| 专利号 | JP1991126284A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enable the position of a window region within a semiconductor wafer to be judged accurately and easily by providing the window region with a band gap which is larger than that of an active layer near the end surface of a resonator of the active layer and by oxidizing the surface of an aluminum layer which is provided on the upper semiconductor layer. CONSTITUTION:A semiconductor buffer layer 103, a semiconductor lower clad layer 104, a semiconductor active layer 109, a semiconductor upper clad layer 105, and a semiconductor contact layer 106 are lamination-formed in sequence on a semiconductor substrate 102. when forming an active layer, a window region 110 with much aluminum content is formed only near a cleavage surface. An Al film 112 is accumulated on the upper semiconductor layer, the surface is oxidized for achieving passivation, thus forming an inverse mesa rib only at a part without any Al film. Since the Al film remains after all processes, the position of the window region can be easily judged from appearance even in a semiconductor layer in buried structure and a cleavage can be formed. |
| 公开日期 | 1991-05-29 |
| 申请日期 | 1989-10-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84681]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | ASAGA TATSUYA. Manufacture of semiconductor laser. JP1991126284A. 1991-05-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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