半導体レーザ
文献类型：专利
| 作者 | 水戸 郁夫; 江村 克己 |
| 发表日期 | 1997-06-06 |
| 专利号 | JP2658547B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To provide a laser with a flat and stable FM response to high-frequency modulating signals by utilizing a structure in which current flows in an active region and part of a phase control region at the same time, and the electrode for injecting current into the phase control region is divided. CONSTITUTION:An n-type InP substrate 4 includes a diffraction grating 9 in a DBR region 3; an active InGaAsP layer 5 in an active region; and an InGaAsP wave guide layer 6 in an area corresponding to the DBR region and a phase control region 2. These layers are covered with a p-type InP clad layer 7 and a p-type InGaAsP contact layer 8. The upper surface of the substrate 1 includes an n-type electrode 50, and bottom surface includes an active region electrode 5 First and second phase control electrodes 52 and 53 and a DBR electrode 54 are provided on the phase control region 2. The first and second electrodes are 50 and 150mum long, respectively. The p-type InGaAsP layer 8 between electrodes on the upper surface is removed to increase the electrical insulation of the three regions. |
| 公开日期 | 1997-09-30 |
| 申请日期 | 1990-10-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84685]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 水戸 郁夫,江村 克己. 半導体レーザ. JP2658547B2. 1997-06-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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