Semiconductor laser device
文献类型：专利
| 作者 | ITAYA KAZUHIKO; OKAJIMA MASASUE; ISHIKAWA MASAYUKI |
| 发表日期 | 1992-04-13 |
| 专利号 | JP1992111486A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent the dispersion of element dimension and improve uniformity of element properties and improve reliability by etching the layer, whose composition is different from that of the InGaAlP clad layer which forms a double hetero structure part, so as to form a ridge. CONSTITUTION:A ridge is formed by the etching of the GaAlAs layer 16, whose composition is different from that of an InGaAlP clad layer 15 which forms a double hetero structure. Accordingly, the thickness of the second conductivity type of first clad layer 15 is not determined by the depth of etching, but determined by the thickness of the clad layer formed first. Furthermore, the depth of etching in forming a ridge part is determined by the thickness of the second conductivity type of second clad layer 16, so the width W of the ridge part does not change by the difference of etching depth, and the width W is determined favorably in controllability. Hereby, the dispersion of the element dimension can be reduced excellently in reproducibility, and the laser device, where operation voltage is low and the highest oscillation temperature is high, can be produced excellently in yield rate. |
| 公开日期 | 1992-04-13 |
| 申请日期 | 1990-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84686]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | ITAYA KAZUHIKO,OKAJIMA MASASUE,ISHIKAWA MASAYUKI. Semiconductor laser device. JP1992111486A. 1992-04-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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