Semiconductor device
文献类型：专利
| 作者 | SUGAWARA MITSURU |
| 发表日期 | 1988-05-26 |
| 专利号 | JP1988122189A |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To improve the characteristic of a semiconductor device such as a semiconductor light-emitting device or the like by capturing electrons and holes and by securing a function to sufficiently block an electric current by means of a semi-insulating semiconductor layer. CONSTITUTION:A semi-insulating InP layer 2 is grown to a thickness of 1 mum on a (100) plane of an n type InP substrate which is doped with, e.g., tin (Sn) by, e.g., a liquid phase epitaxial growth method. A mask 10 is formed on this semi-insulating InP layer 2 by means of, e.g., SiO2 or the like and is processed by an anisotropic etching method; stripe-like groove is made until the groove reaches the n type InP substrate An n-type InP confining layer 3, an undoped InGaAsP active layer 4 and a p-type confining layer 5 are grown in succession inside this stripe-like groove; the confining layer 5 is expanded to the outside of the groove; in succession, a p type InGaAsP layer 6 is grown. Simultaneously with the confining layer 3 and the active layer 4, an n-type InP layer 3a and an InGaAsP layer 4a are grown at the outside of the groove. An insulating layer 7 composed of, e.g., SiO2 or the like, a p-side electrode 8 composed of gold/zinc/gold (Au/Zn/Au) or the like and an n-side electrode 9 composed of gold germanium/gold (AuGe/Au) or the like are formed on this semiconductor substrate. Leakage currents Ia, Ib are blocked by this semi- insulating semiconductor layer 2. |
| 公开日期 | 1988-05-26 |
| 申请日期 | 1986-11-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84688]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | SUGAWARA MITSURU. Semiconductor device. JP1988122189A. 1988-05-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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