Semicondutor light-emitting device
文献类型：专利
| 作者 | SASAI YOUICHI; OONAKA SEIJI |
| 发表日期 | 1985-07-06 |
| 专利号 | JP1985126885A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semicondutor light-emitting device |
| 英文摘要 | PURPOSE:To lengthen the life of a semiconductor laser, and to improve yield by forming an N type buffer layer between a P type buried layer and an N type clad layer. CONSTITUTION:An N type clad layer 2, an undoped active layer 3, a P type clad layer 4 and a P type contact layer are grown to the surface of a substrate 1 in an epitaxial manner in succession through a liquid phase epitaxial growth method. An silicon oxide insulating film is deposited on the P type contact layer, a pattern is formed to a striped shape through a photolithography method while using the silicon oxide insulating film as a mask, and mesa structure is formed by using the chemical etching of a Br methanol group. The substrate 1 to which mesa structure is shaped is fitted into a liquid phase growth boat, and an N type buffer layer 11, a P type buried layer 6 and an N type buried layer 7 are grown on the N type clad layer 2 in the epitaxial manner in succession again. |
| 公开日期 | 1985-07-06 |
| 申请日期 | 1983-12-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84704]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | SASAI YOUICHI,OONAKA SEIJI. Semicondutor light-emitting device. JP1985126885A. 1985-07-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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