Semiconductor laser devices and process for making them
文献类型：专利
| 作者 | SHIMOYAMA, KENJI C/O MITSUBISHI KASEI CORPORATION; GOTOH, HIDEKI C/O MITSUBISHI KASEI CORPORATION |
| 发表日期 | 1990-03-14 |
| 专利号 | EP0342018A3 |
| 著作权人 | MITSUBISHI KASEI CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser devices and process for making them |
| 英文摘要 | Carrier injection layers (5, 7) are formed on an AlxGa1-xAs clad layer (2) of high resistance by embedding and re-growth with the use of crystal growth processes such as MO-VPE or MO-MBE where material supply sources are all provided by gas sources, whereby it is not required to mesa-etch embedding regions to a depth reaching a substrate (1); the formation of any separate blocking layer is dispensed with; any possible influence of the substrate (1) is eliminated; and the time constant is decreased by decreasing the inter-electrode capacity. |
| 公开日期 | 1990-03-14 |
| 申请日期 | 1989-05-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84707]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI KASEI CORPORATION |
| 推荐引用方式 GB/T 7714 | SHIMOYAMA, KENJI C/O MITSUBISHI KASEI CORPORATION,GOTOH, HIDEKI C/O MITSUBISHI KASEI CORPORATION. Semiconductor laser devices and process for making them. EP0342018A3. 1990-03-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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