Semiconductor light-emitting device
文献类型：专利
| 作者 | TANAHASHI TOSHIYUKI |
| 发表日期 | 1992-12-11 |
| 专利号 | JP1992359486A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To provide a semiconductor light-emitting device with a low threshold current and a high efficiency by restricting an overflow of carriers from an activation layer. CONSTITUTION:An n-type (Al0.7Ga0.3)0.5In0.5P lower clad layer 14, a Ga0.5In0.5P activation layer 16, a p-type Al0.8Ga0.2As barrier layer 18 which is 0.1mum thick, a p-type (Al0.7Ga0.3)0.5P upper clad layer 20 are lamination in sequence on an n-type GaAs substrate 12. Then, a band discountinuity Ec between a lower edge of a conduction band of the Ga0.5In0.5P activation layer 16 and a lower edge of a conduction band of the p-type Al0.8GaAs barrier layer 18 is equal to 230meV and is larger than a conventional value by 40meV, thus enabling overflow of electrons to be restricted. |
| 公开日期 | 1992-12-11 |
| 申请日期 | 1991-06-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84713]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI. Semiconductor light-emitting device. JP1992359486A. 1992-12-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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