Semiconductor laser device
文献类型：专利
| 作者 | KANEMOTO KYOZO; FUJIWARA KENZO |
| 发表日期 | 1986-10-18 |
| 专利号 | JP1986234587A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the threshold value of oscillation and to stabilize a lateral mode, by confining carriers and light in layers. CONSTITUTION:A P type region 13 is formed by the diffusion of P-type impurities such as, e.g., Zn, so as to surround an active region 12 in a circular cylinder shape. Thus, a cylindrical P-N junction structure is obtained. The active region 12 is surrounded by a cylindrical P-N junction plane 20. Electrons selectively flow into the active region 12 by the diffusing potential between an N-type AlGaAs clad layer 3 and N-type GaAs layer 1 and 2. Meanwhile, holes enter into the active region through the homogeneous junction plane between a P region 4n and the active region 12, owing to the difference in resistivities in the P-diffusion regions of the P-type GaAs layer 4n and an undoped AlGaAs layer 5u. The holes are preferentially recombined with the electrons in the region 12, and the carrier-confining effect is obtained. The light-confining effect is obtained by the difference in refractive indexes of the P-type GaAs and the N-type GaAs at the outside of the cylindrical P-N junction plane 20. |
| 公开日期 | 1986-10-18 |
| 申请日期 | 1985-04-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84716]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KANEMOTO KYOZO,FUJIWARA KENZO. Semiconductor laser device. JP1986234587A. 1986-10-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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