Semiconductor laser element
文献类型：专利
| 作者 | YAMAZOE YOSHIMITSU |
| 发表日期 | 1989-07-28 |
| 专利号 | JP1989189188A |
| 著作权人 | SUMITOMO ELECTRIC IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To decrease the threshold current of a laser element and to enhance light emitting efficiency, by forming P-type clad layers with a plurality of layers having different carrier concentrations, and setting the carrier concentration of a layer in contact with an active layer at a low value. CONSTITUTION:A P-type InP clad layer 11 having a carrier concentration of 2X10cm or more, a P-type InP clad layer 12 having a low carrier concentration of 5X10cm, an InGaAsP active layer 3, an N-type InP clad layer 4 having a carrier concentration of 1X10cm and an N-type InGaAsP contact layer 5 are sequentially formed on a P-type InP substrate A stripe type active layer is formed at a part from the layer 5 to the lower part of the layer 11, with a silicon nitride film on the layer 5 as a mask. Embedded layers 6-8 are sequentially formed in the removed region. Thereafter, an insulating film 9 is deposited, and an opening part is provided in the layer 5. Electrodes 10 are formed from both sides. |
| 公开日期 | 1989-07-28 |
| 申请日期 | 1988-01-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84717]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC IND LTD |
| 推荐引用方式 GB/T 7714 | YAMAZOE YOSHIMITSU. Semiconductor laser element. JP1989189188A. 1989-07-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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