Semiconductor laser device
文献类型：专利
| 作者 | NAGAI SEIICHI; KAKIMOTO SHIYOUICHI; IKUWA YOSHITO; NITSUTA SHIGEYUKI; SOGOU TOSHIO; TAKAMIYA SABUROU |
| 发表日期 | 1983-06-08 |
| 专利号 | JP1983096792A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a large output for the titled device by a method wherein, when a p type and an n type electrodes which are provided on one face of a semiconductor laser diode are installed on a heat radiating material, a thermal stress lessening material consisting of an Si substrate, having a diffusion region on the surface facing the above electrodes is interposed between the electrodes, and the temperature rise of the diode active region is reduced. CONSTITUTION:On a semiconductor GaAs substrate 1, an n type GaAlAs layer 2, an n type GaAs active layer 3, an n type GaAlAs layer 4 and an n type GaAs surface layer 5 are laminated and epitaxially grown, and a mesa region 6 is formed by performing an etching on the layers 4 and 5 corresponding to the active region 13 located in the center of the active layer 3. Then, on one of the parts pinching the region 6, a p type region 7, entering into the substrate 1, is formed by diffusion, and a p type and an n type electrodes 8 and 9 are coated on the layer 5, which is divided by the region 6, respectively. Subsequently, when these electrodes are installed on a non-illustrated heat- radiating plate, said installation is performed through the intermediary of a thermal stress lessening material 10 consisting of an Si substrate 14, whereon a Ti metal layer 17 and an Au metal layer are coated on the surface, having a p type diffusion layers 19 and 19'. |
| 公开日期 | 1983-06-08 |
| 申请日期 | 1981-12-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84720]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | NAGAI SEIICHI,KAKIMOTO SHIYOUICHI,IKUWA YOSHITO,et al. Semiconductor laser device. JP1983096792A. 1983-06-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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