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文献类型:专利
作者 | AKIBA SHIGEYUKI; SAKAI KAZUO; UKO KATSUYUKI; MATSUSHIMA JUICHI |
发表日期 | 1987-10-22 |
专利号 | JP1987050074B2 |
著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | - |
英文摘要 | PURPOSE:To inhibit oscillation in a Fabry-Perot mode by forming an air gap to at least one side of the projected surface sides of beams so that the length of a light-emitting layer is made shorter than the length of an adjacent layer. CONSTITUTION:In the distribution feedback type semiconductor laser consisting of an N type InP substrate 1, an N type InGaP waveguide layer 2, the InGaAsP light-emitting layer 3, an InGaAsP buffer layer 4, a P type InP layer 5, a P type InGaAsP layer 6 and electrodes 7, the air gap 10 is formed to at least one side of the projected surface 9 sides of beams so that the length of the light- emitting layer 3 is made shorter than the length of the adjacent layers 2, 4. Beams change into a state that they are radiated from the air gap 10 form a state that they are confined to the light-emitting layer 3, and oscillation threshold value to the Fabry-Perot mode can be increased remarkably. |
公开日期 | 1987-10-22 |
申请日期 | 1981-10-05 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/84724] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
推荐引用方式 GB/T 7714 | AKIBA SHIGEYUKI,SAKAI KAZUO,UKO KATSUYUKI,et al. -. JP1987050074B2. 1987-10-22. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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