Manufacture of semiconductor laser device
文献类型：专利
| 作者 | KURODA TAKAROU; KAJIMURA TAKASHI; KASHIWADA YASUTOSHI; UMEDA JIYUNICHI; AIKI KUNIO |
| 发表日期 | 1985-05-14 |
| 专利号 | JP1985084894A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To improve the yield by elimination of variation by a method wherein an active layer is formed while a substrate for growth is moved successively smoothly in a solution for growth. CONSTITUTION:An N-Ga1-yAlyAs (0.2<=y<=0.7) layer 52 having a film thickness of 0-3.0mum at the groove shoulder is formed on the N-GaAs substrate 51 having a stripe groove (recess) 511 3-6mum wide and 1-2mum deep. Next, on a clad layer 52, a hang-down active layer 53 of crescent form is formed of Ga1-xAlxAs (0<=x<=0.35) by corresponding to the groove. Then, another clad layer 54 is formed of P-Ga1-yAlyAs (0.2<=y<=0.7) having a film thickness of 0-3.0mum at a thin part on the clad layer at the part other than on the active layer and the groove. A stripe electrode 55 is formed on the clad layer 54, and an electrode 56 on the substrate back. Further, the photo resonator is formed by cleavage in both surfaces of the crystal rectangularly intersecting with the groove. |
| 公开日期 | 1985-05-14 |
| 申请日期 | 1984-09-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84725]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KURODA TAKAROU,KAJIMURA TAKASHI,KASHIWADA YASUTOSHI,et al. Manufacture of semiconductor laser device. JP1985084894A. 1985-05-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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