Photo-semiconductor and manufacture thereof
文献类型：专利
| 作者 | ONAKA SEIJI; TSUJII HIRAAKI; SASAI YOICHI; SHIDA ATSUSHI |
| 发表日期 | 1988-09-22 |
| 专利号 | JP1988228789A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photo-semiconductor and manufacture thereof |
| 英文摘要 | PURPOSE:To simplify the coupling of a semiconductor laser with an optical fiber and to improve the reproducibility of the coupling efficiency or the like by providing a resin shaped in a convex lens for focussing the optical output and controlling the emission direction in the optical output section of the semiconductor laser. CONSTITUTION:The emitted light from the resonator surface is upwardly reflected at a reflecting surface which is inclined by about 45 deg. with respect to the principal surface of a semiconductor substrate 1 positioned in front, and is focussed by a polyimide resin 10 of the shape of a convex lens formed between the resonator surface and the reflecting surface. And the emission direction of the focussed optical output is made variable by changing the position of the polyimide resin 10, whereby the oblique angle of the reflecting surface becomes constant. The polyimide resin 10 is shaped into a convex lens by selectively forming a photo resist 53 on the surface of a polyimide resin 52 formed on a semiconductor substrate 51, and isotropically etching the polyimide resin 52 and the photo resist 53 in an oxygen plasma atmosphere. |
| 公开日期 | 1988-09-22 |
| 申请日期 | 1987-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84727]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ONAKA SEIJI,TSUJII HIRAAKI,SASAI YOICHI,et al. Photo-semiconductor and manufacture thereof. JP1988228789A. 1988-09-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。