半導体レ-ザ装置
文献类型：专利
| 作者 | 粂 雅博; 伊藤 国雄; 清水 裕一; 吉川 則之 |
| 发表日期 | 1995-04-10 |
| 专利号 | JP1995032290B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置 |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device having excellent characteristics of reflectivity of approximately 60% in the rear end surface of a resonator with superior reproducibility by coating at least one of the end surfaces of the resonator in a semiconductor laser crystal with an Al2O3 film and an Si film. CONSTITUTION:At least one of the end surfaces 2, 3 of a resonator in a semiconductor laser crystal 1 is coated with an Al2O3 film and an Si film. The front end surface 2 of the semiconductor laser crystal 1 is coated with a coated film such as an Al2O3 coated film 3 having a film-thickness 0.5 wavelength, a rear end surface 4 is coated with a coated film such as an Al2O3 coated film 3' having a film-thickness 0.10 wavelength and the coated film 3' is coated with a coated film such as an Si coated film 5 having a 0.28 or 0.36 wavelength, or the rear end surface 4 is coated with a coated film such as an Al2O3 coated film 3' having a film-thickness 0.40 wavelength and the coated film 3' is coated with a coated film such as an Si coated film 5 having a 0.14 or 0.22 wavelength. The reflectivity of the front end surface 2 is brought to approximately 30% and the reflectivity of the rear end surface 4 to approximately 60% at that time, and an output from laser beams 6' emitted from the rear end surface is brought to 0.43 times as high as that from laser beams 6 emitted from the front end surface 2. |
| 公开日期 | 1995-04-10 |
| 申请日期 | 1986-05-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84737]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 粂 雅博,伊藤 国雄,清水 裕一,等. 半導体レ-ザ装置. JP1995032290B2. 1995-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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