Semiconductor laser and manufacture
文献类型：专利
| 作者 | SUGAO SHIGEO |
| 发表日期 | 1992-09-29 |
| 专利号 | JP1992273493A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture |
| 英文摘要 | PURPOSE:To improve light emission characteristics of crystal and to improve characteristics by reducing dislocation density of a semiconductor laser whose substrate is silicon single crystal. CONSTITUTION:This semiconductor laser is provided with double hetero structure which is constituted of a buffer layer 7, an active layer 8 and a clad layer 9 in a sheet-like space between a lower insulating layer 2 having a single crystalline window 3 which exposes a silicon single crystal surface on a silicon substrate 1 and an upper insulating layer 6. The double heterostructure is in contact with the silicon substrate 1 by the buffer layer 7 through the single crystalline window 3. Dislocation is generated from the single crystalline window 3 wherein the silicon substrate 1 and the buffer layer 7 are in contact with each other; generally, it extends upward according to crystal face orientation which forms a certain angle with the substrate surface and stops at an upper insulating layer. As a result, when the lateral width of the buffer layer 7 is adequately large, dislocation does not attain the active layer 8, thereby reducing dislocation density of the active layer 8. Double heterostructure of good light emission quality can be acquired in this way. |
| 公开日期 | 1992-09-29 |
| 申请日期 | 1991-02-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84740]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SUGAO SHIGEO. Semiconductor laser and manufacture. JP1992273493A. 1992-09-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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