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文献类型：专利
| 作者 | YAMAMOTO SABURO; HAYASHI HIROSHI; KANEIWA SHINJI |
| 发表日期 | 1992-02-04 |
| 专利号 | JP1992006113B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To form a plurality of laser oscillating units of different oscillating wavelengths in a sole element by forming a plurality of oscillating units of different oscillating wavelengths corresponding to the growing velocity of an epitaxially grown layer. CONSTITUTION:After an N type GaAs current blocking layer 2 is liquid phase epitaxially grown on a P type GaAs substrate 1, stripe slots 3, 4 having widths w1, w2 (w1>w2) are formed. The layer 2 is removed in the slots 3, 4, and becomes a current passage. A clad layer 5, an active layer 6, a clad layer 7, and a cap layer 8 are sequentially laminated again by liquid phase epitaxial growth method, thereby forming a double hetero junction type laser operation multilayer crystal layer. Then, the back surface of the substrate 1 is lapped to form the thickness of a wafer to approx. 120mum, a P type side electrode 9 is then formed, while and an N type side electrode 10 is formed on the upper surface of the layer 8. To divide the laser operation multilayer crystal in the units of the slots 3, 4, an isolating slot 11 is formed in parallel with the slots 3, 4, and the multilayer crystal is etched until reaching the substrate |
| 公开日期 | 1992-02-04 |
| 申请日期 | 1983-03-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84742]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABURO,HAYASHI HIROSHI,KANEIWA SHINJI. -. JP1992006113B2. 1992-02-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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