Manufacture of semiconductor laser
文献类型：专利
| 作者 | MIZUOCHI HITOSHI |
| 发表日期 | 1991-02-19 |
| 专利号 | JP1991038081A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate the positional control of an active layer by a method wherein a single crystal layer, which has a first conductivity type identical with that of a semiconductor substrate, consists of a semiconductor material different from that of the substrate and is used as an etching stopper layer, is provided on the semiconductor substrate. CONSTITUTION:A P-type InGaAsP layer 11 is crystal grown on a P-type InP substrate 1, subsequently a P-type InP buffer layer 2, an N-type InP current blocking layer 3, a P-type InP current blocking layer 4 and an InGaAsP mask layer 5 are grown one after another. Moreover, an etching is performed up to the layer 2 using an etching end point of a striped groove 6 as the layer 11, which is used as an etching stopper layer, and as the layer 11 is left in the groove 6 or after the layer 11 is etched away, a P-type InP lower clad layer 7, an InGaAsP active layer 8, an N-type InP upper clad layer 9 and an N-type InGaAsP electrode contact layer 10 are grown. Thereby, the position of the layer 8 can be stabilized. |
| 公开日期 | 1991-02-19 |
| 申请日期 | 1989-07-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84748]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MIZUOCHI HITOSHI. Manufacture of semiconductor laser. JP1991038081A. 1991-02-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。