Manufacture of semiconductor laser element
文献类型：专利
| 作者 | KONDO MASAFUMI; SUYAMA NAOHIRO; TAKAHASHI KOUSEI; HOSODA MASAHIRO; SASAKI KAZUAKI; HAYAKAWA TOSHIRO |
| 发表日期 | 1990-01-19 |
| 专利号 | JP1990015687A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To enable a single chip to oscillate two or more laser rays by a method wherein an element, possessed of two properties of both a donor and an acceptor as a dopant, is grown on a specified III-V compound semiconductor substrate through a molecular ray epitaxy method to form two or more oscillating regions on a single chip. CONSTITUTION:A mask is formed in stripes on a 100 Cr doped semi-insulating GaAs substrate 13 in a [0-11] direction, which is etched to form a normal mesa- shaped substrate provided with 111A faces 14 and 15 on its slope. Next, the following are continuously grown on the substrate 13 through an MBE method: a non-doped high resistance GaAs buffer layer 16; a non-doped high resistance Al0.32Ga0.68As current block layer 17; a Si doped Al0.32Ga0.68As clad layer 18; a Si doped Al0.08Ga0.92As active layer 19; a Si doped Al0.32Ga0.68As clad layer; and a Si doped GaAs contact layer 2 Next, the p-n junction of the contact layer 21 is etched. After that, a SiNX insulating film is formed and a current block layer 22 is formed. Next, a p-type electrode 23 of Au/AuZ and an n-type electrode 24 of AuGe/Ni are evaporated. Then, the substrate 13 is abraded and devided into chips. |
| 公开日期 | 1990-01-19 |
| 申请日期 | 1988-07-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84755]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | KONDO MASAFUMI,SUYAMA NAOHIRO,TAKAHASHI KOUSEI,et al. Manufacture of semiconductor laser element. JP1990015687A. 1990-01-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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