Submount for optical semiconductor element
文献类型：专利
| 作者 | SAITOU KATSUTOSHI; TOKUDA MASAHIDE; IMAI KUNINORI; MIZUISHI KENICHI; CHIBA KATSUAKI; KOBAYASHI MASAMICHI |
| 发表日期 | 1985-04-26 |
| 专利号 | JP1985074539A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Submount for optical semiconductor element |
| 英文摘要 | PURPOSE:To obtain the submount which withstands high temperature and high humidity by a method wherein the barrier layer to be provided on a wiring layer is constituted by Pt. CONSTITUTION:A wiring layer 41 is formed by performing a vacuum-deposition of Au layer 37, a Ti layer 38 and a Pt barrier main body layer 30 are successively vapor-deposited, and a barrier layer 41 is formed. Then, a solder layer- shaped window is provided on a resist layer 43. Subsequently, Pb-Sn solder 44 is vapor-deposited on the surface of the resist layer 43 in the state wherein a resist film is coated. Then, a sample is soaked in an organic solvent in which a photoresist film will be dissolved, supersonic vibrations are applied to the solvent, the resist film is removed by dissolution, and a solder layer 52 is selectively formed. Lastly, a heat conductive SiC ceramic substrate 31 is cut in accordance with the patterning pitc of the solder layer, and a submount 50 is manufacture. Then, after a semiconductor lase chip 53 has been die-conded on the solder layer 52, the submount is soldered on a heat dissipating member 56. Then, an Au wire 55 is supersonic die-bonded on the upper electrode 54. Also, an Au wire 57 is supersonic die-bonded on a barrier 42, and a chip lower electrode is connected to the outside part. |
| 公开日期 | 1985-04-26 |
| 申请日期 | 1983-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84756]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | SAITOU KATSUTOSHI,TOKUDA MASAHIDE,IMAI KUNINORI,et al. Submount for optical semiconductor element. JP1985074539A. 1985-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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