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文献类型：专利
| 作者 | KASAHARA KENICHI |
| 发表日期 | 1988-08-25 |
| 专利号 | JP1988042875B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain high efficiency laser of low threshold value by forming a distribution reflector at one end of an output waveguide and a phase regulator at the other end and forming an active waveguide, a distribution reflector and the phase regulator in independent electrode structues, thereby improving the defects in the structure of a distribution reflection type semiconductor laser. CONSTITUTION:An output waveguide 22, an active waveguide 23 and a p type InP 24 are continously grown on a substrate 21, chemical etching is performed to the surface of the waveguide 22 with the waveguide 23 remaining, a periodic diffraction grating 27 is formed on the distribution reflector 221 of the exposed waveguide 22, p type InP 30, 31 are again grown on the surface, chemical etching is peformed to the surface of the waveguide 22 among electrodes 25, 28, 29, Au, Ge, Ni are deposited, thereby forming an electrode 26 and electrodes 25, 28, 29 by depositing Au-Zn. In this manner, the electrode structure that voltages are independently applied to the distribution reflector and the phase regulator is provided, thereby obtaining a semiconductor laser element capable of regulating to operate by a single wavelength oscillation with low threshold value in high efficiency. |
| 公开日期 | 1988-08-25 |
| 申请日期 | 1981-11-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84760]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | KASAHARA KENICHI. -. JP1988042875B2. 1988-08-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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