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文献类型：专利
| 作者 | YANO MITSUHIRO; NISHI HIROSHI; KUMAI TSUGIO; TAKUSAGAWA KIMITO |
| 发表日期 | 1984-02-01 |
| 专利号 | JP1984004870B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To unify and stabilize a transverse mode by a method wherein a waveguide region is provided on a clad layer at InP substrate side of an InGaAsP activated layer, and a current carrying region is provided on a loss layer between the clad layer and the substrate a little wider than the waveguide region. CONSTITUTION:An n-InGaAsP loss layer 2 is formed on an n-InP substrate, subjected to Zn diffusion with a mask with width s applied thereon to have a current blocking p-region 2a formed, and a groove with width w is formed through etching an n-region 2b with a mask with width l applied thereon. The p-region 2a will be deep to reach an interface of the substrate 1 and the loss layer 2 or to get into the substrate 1 partly. Next, n-InGaAsP clad layer 3, InGaAsP activated layer 4, p-Inp clad layer 5 are laminated, and electrodes 6, 7 are provided. A given relation in band gap energy is obtained through selecting composition of each layer. According to this constitution, a light emitting region is formed to have a width w slightly narrower than the current carrying region width s, and thus a transverse mode is stabilized and unified, thereby obtaining an output characteristic of good linearity. |
| 公开日期 | 1984-02-01 |
| 申请日期 | 1978-12-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84768]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YANO MITSUHIRO,NISHI HIROSHI,KUMAI TSUGIO,et al. -. JP1984004870B2. 1984-02-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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