Semiconductor laser
文献类型：专利
| 作者 | KAGAWA HITOSHI |
| 发表日期 | 1991-11-19 |
| 专利号 | JP1991259585A |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve the S/N characteristic of a readout operation of an optical disk at a low output without damaging a high-output characteristic by a method wherein an edge protective film of a four-layer structure in which Al2O3 and SiO2 having an optical length at a quarter wavelength of a laser beam have been laminated alternately is formed at a laser emission edge. CONSTITUTION:An edge protective film 3 of a four-layer structure which is composed of an Al2O3 film 4, an SiO2 film 5, an Al2O3 film 3 and an SiO2 film 7 having an optical length at a quarter of a wavelengthlambda of a laser beam is formed at a laser emission edge of a semiconductor-laser chip main body 1 having a waveguide layer 2. Even when a returned-light ratio becomes close to 10% at a low output, the S/N ratio is not deteriorated. |
| 公开日期 | 1991-11-19 |
| 申请日期 | 1990-03-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84770]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | KAGAWA HITOSHI. Semiconductor laser. JP1991259585A. 1991-11-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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