Semiconductor laser
文献类型：专利
| 作者 | TAKAHASHI SHOGO |
| 发表日期 | 1991-04-26 |
| 专利号 | JP1991101284A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To eliminate current leak from an impurities diffusion region, enable current to be concentrated at an activation layer, and achieve oscillation at a low threshold value by forming a low-resistance semiconductor layer at the lower part of a quantum well activation layer and by mixing a first conductivity type impurity until the inside of this high-resistance semiconductor layer is reached. CONSTITUTION:An undoped high-resistance AlGaAs layer 10 is provided between an S.I GaAs substrate 1 and a p-type AlGaAs lower clad layer 2 and an n-type diffusion region 6 reaches the inside of the high-resistance AlGaAs layer 10 so that a remote junction is formed and no current flows within the high- resistance AlGaAs layer 10 even if a junction of an SQW activation layer 3 of the activation region is formed within an n-type AlGaAs upper clad layer 4. Thus, current leak from an n-type diffusion region 6 is prevented, thus enabling current to be concentrated at an SQW activation layer 3. |
| 公开日期 | 1991-04-26 |
| 申请日期 | 1989-09-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84773]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TAKAHASHI SHOGO. Semiconductor laser. JP1991101284A. 1991-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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