Semiconductor laser with electrically tunable wavelength
文献类型：专利
| 作者 | SCHILLING, MICHAEL; WÜNSTEL, KLAUS, DR.; DÜTTING, KASPAR; SCHWEIZER, HEINZ, DR. |
| 发表日期 | 1991-04-24 |
| 专利号 | EP0423528A2 |
| 著作权人 | ALCATEL SEL AKTIENGESELLSCHAFT |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser with electrically tunable wavelength |
| 英文摘要 | Semiconductor lasers with tunable wavelength and a laser-active region, a photon-emission region, which may be the waveguide region, and a frequency filter, for example a Bragg grating, are known. Photons are injected into the laser-active region by current injection into the waveguide region in the vicinity of the Bragg grating. The invention provides a semiconductor laser from whose waveguide region those photons are injected into the laser-active region whose energies differ from the total energy resulting from the chemical potential of the electron-hole pair and the energy of the longitudinal acoustic phonons by less than half the thermal energy. Photons of this energy are injected into the laser-active region formed by a layer (9) of indium gallium arsenide phosphide by a current (IT) in the photon-emission region (17) in the vicinity of the Bragg grating. |
| 公开日期 | 1991-04-24 |
| 申请日期 | 1990-10-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84787]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ALCATEL SEL AKTIENGESELLSCHAFT |
| 推荐引用方式 GB/T 7714 | SCHILLING, MICHAEL,WÜNSTEL, KLAUS, DR.,DÜTTING, KASPAR,et al. Semiconductor laser with electrically tunable wavelength. EP0423528A2. 1991-04-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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