Semiconductor laser and its manufacture
文献类型：专利
| 作者 | HORIKAWA HIDEAKI; WADA HIROSHI; OGAWA HIROSHI; KAWAI YOSHIO |
| 发表日期 | 1988-11-18 |
| 专利号 | JP1988283089A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To generate a high output by a method wherein a lower-part clad layer is formed inside a stripe-shaped groove and a current-constricting layer composed of an N-type InP layer and a p-type InP layer is formed on both sides of said groove so that an electric current can flow to an active layer in a concentrated manner. CONSTITUTION:An N-type InP current-constricting layer 34 and a P-type InP current-constricting layer 36 are laminated as a current-constricting layer 32 in succession on a p-type InP substrate 30; an etching mask 50 is applied. The current-constricting layer 32 is etched by using this mask 50; a stripe-like groove 38 reaching the substrate 30 is made. Then, a lower-part clad layer 40 which has a recessed part 42 on the surface is laminated inside the groove 38; after that, the etching mask 50 is removed; a P-type GaInAsP light-guide layer 44, a GaInAsP active layer 46, an N-type InP upper-part clad layer 48 are laminated in succession by a liquid growth method. |
| 公开日期 | 1988-11-18 |
| 申请日期 | 1987-05-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84789]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HORIKAWA HIDEAKI,WADA HIROSHI,OGAWA HIROSHI,et al. Semiconductor laser and its manufacture. JP1988283089A. 1988-11-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。