Manufacture of semiconductor laser element
文献类型：专利
| 作者 | FUKUNAGA TOSHIAKI; MATOBA AKIHIRO; KAWAI YOSHIO; SAKUTA MASAAKI |
| 发表日期 | 1985-08-06 |
| 专利号 | JP1985149184A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To enable the easy growth of the first clad layer and an active layer which are very thin by a method wherein a grooved mesa stripe structure is formed on a substrate, and then liquid phase epitaxial growth is performed. CONSTITUTION:The mesa strip structure 12 having a stripe groove at the center is formed on the N-GaAs substrate 10. The first clad layer 13, active layer 14, second clad layer 15, and a cap layer 16 are successively grown on the structure 12 surface and the substrate surface 10b by liquid phase epitaxial growth. In this growth, the growing speed of the layers 13 and 14 in the upper side flat surface 10a of the structure 12 is much lower than in the inclined surface of the groove 11; therefore, the growing time can be controlled simply, easily, and accurately. Accordingly, the thicknesses of the layers 13 and 14 can be made small easily by this control of growing time, and the thickness control can be accomplished with good reproducibility. |
| 公开日期 | 1985-08-06 |
| 申请日期 | 1984-01-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84791]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | FUKUNAGA TOSHIAKI,MATOBA AKIHIRO,KAWAI YOSHIO,et al. Manufacture of semiconductor laser element. JP1985149184A. 1985-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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