Production of semiconductor device
文献类型：专利
| 作者 | HASHIMOTO AKIHIRO; FUKUNAGA TOSHIAKI; WATANABE NOZOMI |
| 发表日期 | 1991-04-05 |
| 专利号 | JP1991080229A |
| 著作权人 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Production of semiconductor device |
| 英文摘要 | PURPOSE:To lessen the deterioration of the device by the damage arising from etching and to simplify the process by etching a microregion after crystal growth, thereby forming an optical switch. CONSTITUTION:Two grooves 24a, 24b of an inverted trapezoidal shape, the base of which is a (100) face and the side faces are a (111) face, are formed on contact with each other on the right and left in the surface part of a (100) Si substrate 21 and the other substrate surface is held coated with a mask layer 22; thereafter, this Si substrate 21 is subjected to the crystal growth of a lower clad layer 25 consisting of a compd. semiconductor, a waveguide layer 26, an upper clad layer 27, and a cap layer 28. The state in which the groove 33 is dug in the cap layer 28 and the upper clad layer 27 in the central part between the two waveguides 29a and 29b and the state in which a pair of electrodes 30a, 30b are formed on the cap layer 28 on both sides thereof are thereafter formed. The optical switch is formed simply by etching the central microregion after the crystal growth in this way. The deterioration arising from the etching is lessened in this way and the process is simplified. |
| 公开日期 | 1991-04-05 |
| 申请日期 | 1990-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84797]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | HASHIMOTO AKIHIRO,FUKUNAGA TOSHIAKI,WATANABE NOZOMI. Production of semiconductor device. JP1991080229A. 1991-04-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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