Semiconductor light-emitting element
文献类型：专利
| 作者 | IWAMURA HIDETOSHI; HIRAYAMA YOSHIO; OKAMOTO HIROSHI |
| 发表日期 | 1987-10-13 |
| 专利号 | JP1987232986A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To reduce the strain due to stress of the AlGaAs active layer in an AlGaAs visible light laser by manufacturing the laser using an In-doped GaAs substrata or an InSi-doped GaAs substrate. CONSTITUTION:A semiconductor light-emitting element is composed of a PGaAs layer 1 (thickness=0.2 mum), a P-type Al0.6Ga0.4AS clad layer 2 (thickness=5 mum), and Al0.2Ga0.8As active layer 3 (thickness=0.1 mum), an N-type Al0.6Ga0.4As clad alyer 4 (thickness=5mum) and an InSi-doped N-type GaAs substrate 9. The grating constant of the InSi-doped substrate having an In doping concentration of 5 X10cm becomes larger than that of an Si-doped substrate. To the active layer 3, the stress of 2 X 10Pa due to strain is applied and the amount of the stress is reduced to 1/5 in comparison with the case of the use of the normal Si-doped GaAs substrate. The rise of the laser oscillation threshold value due to the stress due to strain and the deterioration of this laser are inhibited and the long-lived laser can be obtained at a low threshold value. |
| 公开日期 | 1987-10-13 |
| 申请日期 | 1986-04-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84798]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | IWAMURA HIDETOSHI,HIRAYAMA YOSHIO,OKAMOTO HIROSHI. Semiconductor light-emitting element. JP1987232986A. 1987-10-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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