Semiconductor light emitting element
文献类型：专利
| 作者 | ONODERA NORIAKI |
| 发表日期 | 1989-05-18 |
| 专利号 | JP1989125886A |
| 著作权人 | RICOH CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To obtain a large light emitting output by a method wherein a semi- insulating layer which serves as a current constriction layer is formed on a primary face of a substrate through a vapor phase growth method and the thickness between an active layer and the face of the laminated section is made to be thin. CONSTITUTION:A mesa-shaped groove 180 is provided to a GaAs layer 110 on a primary face side of a substrate 101, that is, the mesa-shaped groove 180 is provided to the laminated layers in a direction perpendicular to the substrate 101 so as to enable its base to reach to the substrate 10 An n- AlyGa1-yAs clad layer 102 (0.3 |
| 公开日期 | 1989-05-18 |
| 申请日期 | 1987-11-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84804]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH CO LTD |
| 推荐引用方式 GB/T 7714 | ONODERA NORIAKI. Semiconductor light emitting element. JP1989125886A. 1989-05-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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