Manufacture of semiconductor laser element
文献类型：专利
| 作者 | NISHIJIMA YOSHITO; FUKUDA HIROKAZU; YAMAMOTO KOUSAKU |
| 发表日期 | 1984-03-17 |
| 专利号 | JP1984047791A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To enable to form a semiconductor laser element of excellent characteristic by so constituting that an impurity is not interposed in the interface between the upper surface of an active layer and the upper closed layer. CONSTITUTION:The lower closed layer 12 consisting of lead, tellurium, and selenium (PbTe1-ySey) of a fixed thickness is formed on a PbTe substrate. Thereafter, the active layer 13 of lead, and tin tellurium (Pb1-XSnXTe) of a fixed thickness of the second layer is formed on the substrate. The upper closed layer 14 consisting of lead, tellurium, and selenium (PbTe1-YSeY) of a fixed thickness which becomes the third layer is formed on the substrate. Next, the active layer 13 and the upper closed layer 14 are formed into a fixed pattern. Besides, the entire surface on the substrate treated in such a manner is coated with an additional closed crystal layer 15 composed of PbTe1-YSeY of the same compound semiconductor as the forming material for the upper closed layers 14. |
| 公开日期 | 1984-03-17 |
| 申请日期 | 1982-09-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84810]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NISHIJIMA YOSHITO,FUKUDA HIROKAZU,YAMAMOTO KOUSAKU. Manufacture of semiconductor laser element. JP1984047791A. 1984-03-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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