Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | OBA YASUO; WATANABE MIYOKO; SUGAWARA HIDETO; ISHIKAWA MASAYUKI; WATANABE YUKIO; YAMAMOTO MOTOYUKI |
| 发表日期 | 1988-02-24 |
| 专利号 | JP1988043387A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To stabilize a mode, and to reduce a threshold by making the Al composition of a p-type In1-x-yGaxAly group clad layer larger than a specific value. CONSTITUTION:An n-GaAs buffer layer 12 and an n-InGaP buffer layer are formed onto an n-GaAs substrate 1 An i-InAlP clad layer 14, an InGaP active layer 15 and a double hetero-junction structure section consisting of p-InGaAlP group clad layers 16-18 are shaped onto the layer 13. The layer 18 is processed to a stripe shape at that time. A p-InGaP contact layer 19 and a p-GaAs contact layer 20 are formed onto the layer 18. An n-GaAs current blocking layer 21 is shaped on the side surface of the layer 20. In said constitution, the rate of Al in In1-x-yGaxAly forming the layers 16-18 is set to y>=4. Accordingly, the confinement of carriers can be realized by utilizing the barriers of the layers 16-18 and the layer 21, thus excellently confining carriers by the barriers. |
| 公开日期 | 1988-02-24 |
| 申请日期 | 1986-08-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84822]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | OBA YASUO,WATANABE MIYOKO,SUGAWARA HIDETO,et al. Semiconductor laser device and manufacture thereof. JP1988043387A. 1988-02-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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