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文献类型：专利
| 作者 | AKITA KENZO; KUSUKI TOSHIHIRO; NISHITANI YORIMITSU; NISHI HIROSHI |
| 发表日期 | 1985-11-20 |
| 专利号 | JP1985052577B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To improve the light emitting efficiency and reduce the ohmic resistance of p-type electrode by using Cd as impurity for a p-type InP clad layer and Zn as impurity for a p-type InGaAsP electrode contact layer. CONSTITUTION:For LEDs of semiconductor lasers, formed on an n-type P substrate 1 are an undoped n-type InGaAsP active layer 2, a p-type InP clad layer 3' and a p-type InGaAsP electrode contact layer 4. In this occasion, to reduce the diffusion of impurities into the layer 2 and to form an electrode with low ohmic contact resistance through the selective combination of impurities in the layers 3' and 4, Cd and Zn are used as impurities for the layers 3' and 4, respectively. By so doing, it becomes possible to improve the light emitting efficiency and reduce the ohmic resistance of the p-type electrode. |
| 公开日期 | 1985-11-20 |
| 申请日期 | 1979-03-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84830]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | AKITA KENZO,KUSUKI TOSHIHIRO,NISHITANI YORIMITSU,et al. -. JP1985052577B2. 1985-11-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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