Liquid phase epitaxially growing method
文献类型：专利
| 作者 | OONAKA SEIJI; OGURA MOTOTSUGU; SASAI YOUICHI; HASE NOBUYASU |
| 发表日期 | 1983-12-12 |
| 专利号 | JP1983213416A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxially growing method |
| 英文摘要 | PURPOSE:To worsen the wetting between a solution and a supporter, and prevent the leakage of the soultion by melting indium on the surface of a substrate supporter and solidifying it and then growing it epitaxially after removing it mechanically. CONSTITUTION:A solution supporter 8 is placed on a substrate supporter 9, and indium 12 and 13 are respectively placed in solution reservoirs 10 and 1 Indiums are melted and then cooled to solidify them. The solution supporter 8 is removed, and the indiums 12 and 13 are mechanically removed. After the removal rough surfaces 14 are formed on the surface of the substrate supporter 9 where the indiums 12 and 13 are removed. When molten indiums are mounted on these rough surfaces 14, they becomes round by their own surface tension. The positional relation between the solution supporter 8 and the substrate supporter 9 is shifted and the above process is repeated. |
| 公开日期 | 1983-12-12 |
| 申请日期 | 1982-06-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84835]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | OONAKA SEIJI,OGURA MOTOTSUGU,SASAI YOUICHI,et al. Liquid phase epitaxially growing method. JP1983213416A. 1983-12-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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