半導体発光装置
文献类型：专利
| 作者 | 石橋 晃; 石川 秀人; 森 芳文 |
| 发表日期 | 1996-12-19 |
| 专利号 | JP2593845B2 |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体発光装置 |
| 英文摘要 | PURPOSE:To obtain a highly efficient semiconductor layer, which can specify a current path without providing a special means such as a current narrowing region, by providing clad layers in specified super-lattice structures, and providing the narrowing effect of the current path by the transmission anisotropy of said structure. CONSTITUTION:Neighboring clad layers 2 and 4, which hold an active layer 3, are formed by semiconductor layers having super-lattice structures, wherein a plurality of different semiconductor forming material layers L1, L2,. each having eight atomic layers, are alternately grown epitaxially. An electrode 7 is locally provided in correspondence with transmission anisotropy and the light emitting region of said suer-lattice structure. A current narrowing effect is obtained in the light emitting region together with the electrode For example, the first and second clad layers 2 and 4 are formed by an AlAs layer and a GaAs layer, in which n-type and p-type impurities are doped, respectively, at a ratio of (AlAs)n and (GaAs)m. Each has 1-6 atomic layers, i.e., both (n) and (m) are made to be 1-6. The super-lattice structure comprises very thin semiconductor material layrs, each having said ratio. Thus, the current path can be restricted to a part directly beneath the electrode deposited part only by forming the clad layers in the super-lattice structure. Heat from a light emitting part can be effectively radiated. |
| 公开日期 | 1997-03-26 |
| 申请日期 | 1985-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84836]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | 石橋 晃,石川 秀人,森 芳文. 半導体発光装置. JP2593845B2. 1996-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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