Semiconductor laser
文献类型：专利
| 作者 | KAKIMOTO SHOICHI; FUJIWARA MASATOSHI; TAKAHASHI SHOGO |
| 发表日期 | 1989-09-21 |
| 专利号 | JP1989236677A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable the oscillation of a laser of this design in a single wavelength without deteriorating a lowness in power consumption by a method wherein a region of an MQW active layer on an optical waveguide is disordered to make an optical transmission constant of the region different from that of other regions for the formation of a phase control region. CONSTITUTION:A Zn diffusion region 16 is provided to the central part of a stripe-like active layer 15 composed of a multi-quantum well, and the MQW of the region 16 is disordered. The refractive index of the disordered region 16 is smaller as compared with the other region where Zn is not diffused. Therefore, a transmission constant of the MQW region 16 disordered by the diffusion of Zn is different from that of the MQW region where Zn is not diffused, so that the fin diffused region 16 is made to function as a phase control region. By these processes, a laser of this design can oscillate in a single wavelength without deteriorating a lowness in power consumption. |
| 公开日期 | 1989-09-21 |
| 申请日期 | 1988-03-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84838]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAKIMOTO SHOICHI,FUJIWARA MASATOSHI,TAKAHASHI SHOGO. Semiconductor laser. JP1989236677A. 1989-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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