半導体装置
文献类型:专利
作者 | 中井 建弥 |
发表日期 | 1995-12-18 |
专利号 | JP1995118561B2 |
著作权人 | 富士通株式会社 |
国家 | 日本 |
文献子类 | 授权发明 |
其他题名 | 半導体装置 |
英文摘要 | PURPOSE:To readily integrated OEIC by forming a reverse mesa groove which extends toward the interior from the surface in sectional shape on a substrate, burying a semiconductor layer having high impurity density in the substance in the groove, and growing a crystal on the layer to complete the current narrowing of a laser. CONSTITUTION:With an SiO2 layer opened in a stripe shape by a photoprocess as a mask a reverse mesa groove 2 is formed by etching on an ion-doped SI-InP substrate Then, N type InP layer 3 of 2-3X10cm of carrier density is buried by a CVD method. The SiO2 layer on the substrate is removed, and an InGaAsP layer 4 of active layer, a P-type InP layer 5 of P-type clad layer and an N-type InP layer 6 of N-type clad layer are sequentially grown. Then, HR-InP layer 8 are grown at both sides of a laser active unit, P type diffused regions 7, electrode 8 are formed, unnecessary portion of a grown layer is mesa etched to be removed. Thus, the depth of the groove 2 is increased, the back surface of the substrate is polished to exposed the buried N type InP layer 3, and an N-type side electrode is formed. Thus, a structure with complete current narrowing is obtained. |
公开日期 | 1995-12-18 |
申请日期 | 1985-11-15 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/84841] |
专题 | 半导体激光器专利数据库 |
作者单位 | 富士通株式会社 |
推荐引用方式 GB/T 7714 | 中井 建弥. 半導体装置. JP1995118561B2. 1995-12-18. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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