Semiconductor laser
文献类型：专利
| 作者 | ITO TATSUYA; HASHIMOTO HIROKAZU |
| 发表日期 | 1986-08-06 |
| 专利号 | JP1986174788A |
| 著作权人 | FUJIKURA LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a single-mode oscillating laser at a high yield rate, by omitting Zn diffusion, and providing a current narrowing structure, in which a cap layer is formed in a mesa stripe. CONSTITUTION:At the center of an n-GaAs substrate 7, a groove is formed in perpendicular to a cleavage plane along a laser optical axis. An n-Ga1-xAlxAs clad layer 6, a Ga1-yAlAs active layer, a Ga1-xAlxAs clad layer 4 and a p-GaAs cap layer 2 are epitaxially formed so that the surface becomes approximately flat. Values of (x) and (y) are selected to be 0<=y |
| 公开日期 | 1986-08-06 |
| 申请日期 | 1985-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84848]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA LTD |
| 推荐引用方式 GB/T 7714 | ITO TATSUYA,HASHIMOTO HIROKAZU. Semiconductor laser. JP1986174788A. 1986-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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