Variable wavelength semiconductor laser
文献类型：专利
| 作者 | INOUE NAOHISA; MORI KAZUHIKO; MATANO MASAHARU; YAMASHITA MAKI |
| 发表日期 | 1983-06-07 |
| 专利号 | JP1983095888A |
| 著作权人 | TATEISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Variable wavelength semiconductor laser |
| 英文摘要 | PURPOSE:To perform stable single longitudinal mode oscillation and to vary the oscillating wavelength, by selectively driving a plurality of Gunn diodes having different distances between electrodes, which are provided on a light confining layer. CONSTITUTION:On a semiconductor laser, e.g. an n-GaAs single crystal substrate 1 of a double heterostructured laser diode, an n-Ga1-XAlxAs layer 2, a P-GaAs layer 3, a P-Ga1-XAlxAs layer 4, a p-GaAs layer 5 are grown by using a liquid phase epitaxial technology. An insulating film 11 is formed on said layer 3. Gunn diode arrays 12 comprising a plurality of the Gunn dioses having the different distances between the plurality of the electrodes are provided on both sides of a metallic strip array on said insulating film 1 One Gunn diode of said arrays 12 is selected by a switch 13 and driven. Thus the wavelength of a generated SAW can be selected, and the wavelength of the oscillated signal can be switched over. |
| 公开日期 | 1983-06-07 |
| 申请日期 | 1981-12-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84850]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TATEISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | INOUE NAOHISA,MORI KAZUHIKO,MATANO MASAHARU,et al. Variable wavelength semiconductor laser. JP1983095888A. 1983-06-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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