Semiconductor light emitting element and manufacture thereof
文献类型：专利
| 作者 | MORINAGA MOTOYASU; HIRAYAMA YUZO; NAKAMURA MASARU |
| 发表日期 | 1989-07-25 |
| 专利号 | JP1989185988A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element and manufacture thereof |
| 英文摘要 | PURPOSE:To adjust a width of an active layer with good controllability and to produce a high performance semiconductor light emitting element which can perform a high speed modulation. by employing resist and mask alignment processes in order lo regulate the width of the active layer. CONSTITUTION:After a trench or projecting section surrounding an active region 12 is regulated by a mask alignment with accuracy and a broad mesa 20 is formed, the rest of an active layer 12b located on the outside of the mesa 20 is selectively etched away. Therefore, a wide contact width and a buried section 13a regulated narrowly and precisely can be formed in a self-alignment manner. Accordingly, a semiconductor laser can be produced with good reproducibility which has a stable fundamental transverse mode oscillation, a low leakage current, a low resistance and a small junction capacitance, and which can carry out high speed modulation, high luminous efficiency, high output and low threshold operations. |
| 公开日期 | 1989-07-25 |
| 申请日期 | 1988-01-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84854]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | MORINAGA MOTOYASU,HIRAYAMA YUZO,NAKAMURA MASARU. Semiconductor light emitting element and manufacture thereof. JP1989185988A. 1989-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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