Buried lateral index guided lasers and lasers with lateral current blocking layers
文献类型:专利
作者 | CHUA, CHRISTOPHER L.; KNEISSL, MICHAEL A.; JOHNSON, NOBLE M.; KIESEL, PETER |
发表日期 | 2007-07-05 |
专利号 | US20070153853A1 |
著作权人 | PALO ALTO RESEARCH CENTER INCORPORATED |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Buried lateral index guided lasers and lasers with lateral current blocking layers |
英文摘要 | A method and structure for laterally index guiding is described. In the method, lateral areas around the a semiconductor device active region are exposed to hydrogen. The hydrogen adjusts the index of refraction surrounding the laser active region helping to confine both the electrical carriers and the generated light to the laser active region. |
公开日期 | 2007-07-05 |
申请日期 | 2005-12-15 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/84858] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | PALO ALTO RESEARCH CENTER INCORPORATED |
推荐引用方式 GB/T 7714 | CHUA, CHRISTOPHER L.,KNEISSL, MICHAEL A.,JOHNSON, NOBLE M.,et al. Buried lateral index guided lasers and lasers with lateral current blocking layers. US20070153853A1. 2007-07-05. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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