中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Buried lateral index guided lasers and lasers with lateral current blocking layers

文献类型:专利

作者CHUA, CHRISTOPHER L.; KNEISSL, MICHAEL A.; JOHNSON, NOBLE M.; KIESEL, PETER
发表日期2007-07-05
专利号US20070153853A1
著作权人PALO ALTO RESEARCH CENTER INCORPORATED
国家美国
文献子类发明申请
其他题名Buried lateral index guided lasers and lasers with lateral current blocking layers
英文摘要A method and structure for laterally index guiding is described. In the method, lateral areas around the a semiconductor device active region are exposed to hydrogen. The hydrogen adjusts the index of refraction surrounding the laser active region helping to confine both the electrical carriers and the generated light to the laser active region.
公开日期2007-07-05
申请日期2005-12-15
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/84858]  
专题半导体激光器专利数据库
作者单位PALO ALTO RESEARCH CENTER INCORPORATED
推荐引用方式
GB/T 7714
CHUA, CHRISTOPHER L.,KNEISSL, MICHAEL A.,JOHNSON, NOBLE M.,et al. Buried lateral index guided lasers and lasers with lateral current blocking layers. US20070153853A1. 2007-07-05.

入库方式: OAI收割

来源:西安光学精密机械研究所

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