Method and apparatus for forming semiconductor epitaxial crystal thin-film
文献类型：专利
| 作者 | YAMAZOE YOSHIMITSU |
| 发表日期 | 1984-05-12 |
| 专利号 | JP1984082716A |
| 著作权人 | SUMITOMO DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method and apparatus for forming semiconductor epitaxial crystal thin-film |
| 英文摘要 | PURPOSE:To realize superlattice structure effectively by turning a substrate, transferring the substrate to two or more of reaction chambers in succession and laminaing crystals of various kinds in multilayer structure. CONSTITUTION:The substrate 4 is set under the state in which it enters in a washing chamber 14, and an inert gas is flowed through the washing chamber 14. When a reaction system is stabilized sufficiently and a substrate holder 3 is moved at 90 deg. in the clockwise direction, the state in which the substrate 4 enters in the first reaction chamber 10 is brought, and a first crystal begins to grow. When a crystal growth is completed and the substrate is turned further at 90 deg., the substrate 4 enters in the washing chamber again, and the crystal growth stops. When the substrate 4 is turned in the clockwise direction at 90 deg., a second crystal can be grown in the second reaction chamber 1 Accordingly, superlattice structure can be formed easily by turning the substrate at every 90 deg. at necessary time intervals. |
| 公开日期 | 1984-05-12 |
| 申请日期 | 1982-11-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84860]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | YAMAZOE YOSHIMITSU. Method and apparatus for forming semiconductor epitaxial crystal thin-film. JP1984082716A. 1984-05-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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