Submount for optical semiconductor element
文献类型：专利
| 作者 | ISHII MITSUO; TSUMURA KIYOAKI |
| 发表日期 | 1988-07-04 |
| 专利号 | JP1988160292A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Submount for optical semiconductor element |
| 英文摘要 | PURPOSE:To maintain the product quality at a desired level with stability by a method wherein a Ti-Ni-Au barrier layer is provided on both sides of an Si submount and the barrier is covered by a solder layer. CONSTITUTION:On both sides of an Si conductive submount 2, a 500Angstrom -thick Ti first layer 31, a 1500Angstrom -thick Ni second layer 32, and a 500Angstrom -thick Au third layer 33, are formed by spattering, for the construction of a barrier layer 3. The entire surface of the barrier layer 3 is covered by an Sn solder coating. With the layers 31 and 32 in the buffer layer 3 preventing the spread of Si over the surface, there will be no Si oxide formed on the surface. This dispenses with a washing in an inorganic solvent during the packaging process and a product of this design may be stored in the ambient atmosphere. This design keeps stable the quality of products in storage. |
| 公开日期 | 1988-07-04 |
| 申请日期 | 1986-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84862]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ISHII MITSUO,TSUMURA KIYOAKI. Submount for optical semiconductor element. JP1988160292A. 1988-07-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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