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文献类型：专利
| 作者 | - |
| 发表日期 | 1982-07-20 |
| 专利号 | JP1982033878B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To secure the utilization of the supercooling layer formation method and thus to obtain the active layer with a high reproducibility with no defect of under 0.3mum nor the distortion by providing previously the belt- or stripe-type convexity on the surface of the compound semiconductor substrate. CONSTITUTION:The belt- or stripe-type convexity of about 1mum height and 5mum wide is formed by the photo etching at the center part on the surface of N-type GaAs substrate 7(A), and N-type Ga1-xAlAs layer 8, P-type GaAs active layer 9, P-type Ga1-XAlYAs layer 10 and P-type GaAs layer 11 are continuously grown through the epitaxial growing method on the entire surface including the convexity. In this case, the maximum holding temperature and the cooling speed are set to 800 deg.C/min. constantly each for the fusing solution used for formation of the grown layer, and the solution is coated over the substrate when it features 794 deg.C. At the same time, the growing surface is wetted with different solution of the same condition for lamination. After this, stripe electrode 12 of Al2O3 is formed at the areas except that right above the mesa part of layer 11, and P-type electrode 13 and N- type electrode 14 are coated over the exposed region of layer 11 as well as on both surfaces of substrate 7 (A) each over electrode 12. |
| 公开日期 | 1982-07-20 |
| 申请日期 | 1978-05-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84865]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | -. -. JP1982033878B2. 1982-07-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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