Method for fabricating a semiconductor laser diode
文献类型：专利
| 作者 | YOO, TAE KYUNG; CHO, MEOUNG WHAN; SEO, JU OK; LEEM, SHI JONG; NOH, MIN SOO |
| 发表日期 | 1996-05-22 |
| 专利号 | EP0713275A1 |
| 著作权人 | LG ELECTRONICS INC. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for fabricating a semiconductor laser diode |
| 英文摘要 | A method for fabricating a semiconductor laser for performing etching and regrowing of a semiconductor layer of the semiconductor laser in a process once by using a liquid phase etching which is a characteristic of a liquid phase epitaxy is executed by forming a DH-structured semiconductor layer on a substrate, forming a dielectric layer on the semiconductor layer, selectively etching the dielectric layer to expose a predetermined portion of the semiconductor layer, and selectively etching the exposed semiconductor layer using the dielectric layer as mask via the liquid phase etching method and successively regrowing the semiconductor layer on the etched portion via the liquid phase epitaxy. Thus, the DH structure is etched using a melt-back process to instantly execute the regrowth under the state of being unexposed to the air for easily providing the semiconductor laser of high reliability. |
| 公开日期 | 1996-05-22 |
| 申请日期 | 1995-11-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84866]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LG ELECTRONICS INC. |
| 推荐引用方式 GB/T 7714 | YOO, TAE KYUNG,CHO, MEOUNG WHAN,SEO, JU OK,et al. Method for fabricating a semiconductor laser diode. EP0713275A1. 1996-05-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。